国产成人h视频在线播放不卡-精品一区二区三区密臀在线-亚洲av高清在线免费观看-一道在线中文一区二区三区-国产精品一区二区白嫩在线观看-精品久久久久久久久极品-国产成人一区二区三区影-www.国产一区二区在线-亚洲自拍一区在线观看在线观看-久久久免费高清日韩

氧化/擴散/退火爐

適用領域：集成電路、先進封裝、化合物半導體 Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors 適用材料: ?Si、SiC、GaN Suitable for Processing: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) 晶圓尺寸：12/8/6英寸 Wafer Size: 8/6 inch 適用工藝：氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、 合金(Alloy)、擴散(Diffusion) Applicable Processes: High-Temperature Annealing

LPCVD設備

適用領域：集成電路、先進封裝、化合物半導體 Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors 適用材料: ?Si、SiC、GaN Suitable for Processing: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) 晶圓尺寸：12/8/6英寸 Wafer Size: 8/6 inch 適用工藝：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、 二氧化硅(TEOS)、HTO等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon(Poly-Si / U-Poly /D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition, HTO, etc.

SiC高溫退火爐

? 適用領域：化合物半導體 Relevant Industries: Compound Semiconductors ?適用材料：SiC Suitable for Processing: Silicon Carbide (SiC) ?晶圓尺寸：8/6英寸 Wafer Size: 8/6 inch ?適用工藝：高溫退火(Annealing) Applicable Processes: High-Temperature Annealing Applicable process: Annealing of SiC and GaN wafers

SiC高溫氧化爐

?適用領域：化合物半導體 Relevant Industries: Compound Semiconductors ?適用材料：SiC Suitable for Processing: Silicon Carbide (SiC) ?晶圓尺寸：8/6英寸 Wafer Size: 8/6 inch ?適用工藝：高溫氧化(Oxidation) Applicable Processes: High-Temperature Oxidation

LPCVD設備

?適用領域：集成電路、先進封裝 Relevant Industries: Integrated Circuits, Advanced Packaging ?適用材料：Si、SiC Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ?晶圓尺寸：12/8/6英寸 Wafer Size: 12/8/6 inch ?適用工藝：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、二氧化硅(TEOS)、HTO等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon (Poly-Si / U-Poly / D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition, HTO, etc.

氧化/擴散/退火爐

? 適用領域： ?集成電路、先進封裝 Relevant Industries: Integrated Circuits, Advanced Packaging ? 適用材料: ?Si、SiC Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ?晶圓尺寸: ?12/8/6英寸 Wafer Size: 12/8/6 inch ?適用工藝: ?氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、合金(Alloy)、擴散(Diffusion) Applicable Processes: ?Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion